El amplificador de potencia de carga sintonizada
DOI:
https://doi.org/10.24054/rcta.v2i22.1919Keywords:
Amplificador de potencia, alta eficiencia, dispositivos GaN, Carga Sintonizada, Circuitos de microondasAbstract
Este artículo muestra el diseño y los resultados de simulación de un amplificador de potencia de carga sintonizada. El amplificador fue diseñado a 2.4 GHz, obteniendo una eficiencia en saturación arriba del 70 %, junto con una ganancia a pequeña señal de 15 dB. La deducción de ecuaciones de diseño y análisis es presentada considerando condiciones de polarización clase AB y asumiendo el uso de dispositivos FET. Un dispositivo CGH40010F fabricado por Cree Corporation ha sido usado con un modelo no lineal válido hasta 6 GHz y una potencia de salida esperada de 10 W. La simulación se ha llevado a cabo usando la herramienta CAD ADS.
Downloads
References
Gagliardi R. M. (1978). Introduction to Communication Engineering, John Wiley & Sons.
Sokal N. O. and Sokal A. D. (1975). Class E – A new class of high-efficiency tuned single-ended switching power amplifier. Solid-State Circuits, IEEE Journal of. Vol. 10, issue 3. DOI 10.1109/JSSC.1975.1050582.
Raab. F. H., (1997). Class-F power amplifiers with maximally flat waveforms. Microwave Theory and Techniques. IEEE Transactions on. Vol. 45, issue 11. DOI 10.1109/22.644215.
Cripps S. C., (1999). RF Power Amplifiers for Wireless Communications. Artech House.
El-Hamamsy S.-A., (1994). Design of high-efficiency RF Class-D power amplifier. Power Electronics, IEEE Transactions on. Vol. 9, issue 3. DOI 10.1109/63.311263.
Binari S. C. et al., (1997). Fabrication and characterization of GaN FETs. Solid-State Electronics. Vol. 41, issue 10.
Pozar D. M., (1998). Microwave Engineering. John Wiley & Sons.
Colantonio P. et al., (2009). High Efficiency RF and Microwave solid-state power amplifiers. John Wiley & Sons.
Moreno J. J. et al. (2012). Development of Single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards. Microwave and optical technology letters. Vol. 54 No. 1. DOI 10.1002/mop.
Shealy J. et al., (2002). Gallium nitride (GaN) HEMT’s: progress and potential for commercial applications. GaAs IC Symposium, 24th Annual Technical Digest.
Lu. J. et al., (2008). A new small-signal modeling and extraction method in AlGaN/GaN HEMTs. Solid-State Electronics. Vol 52.
CGH40010 Datasheet, Cree Corporation, Rev. 3.1, 2006-2011.
Park H.-C. (2006). High efficiency Class F amplifier design in presence of internal parasitics components of transistor. European Microwave conference.
Downloads
Published
Versions
- 2013-07-02 (4)
- 2013-07-02 (3)
- 2013-07-02 (2)
- 2022-11-08 (1)
How to Cite
Issue
Section
License
Copyright (c) 2013 REVISTA COLOMBIANA DE TECNOLOGIAS DE AVANZADA (RCTA)
![Creative Commons License](http://i.creativecommons.org/l/by-nc/4.0/88x31.png)
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
Authors publishing in this journal agree to the following conditions:
- Authors retain the moral rights of authorship and grant the journal the right of first publication of the work. This work is licensed under the Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0 DEED), allowing third parties to use the work provided appropriate credit is given to the authors and the first publication in this journal. Commercial use of the work is not permitted, and derivative works cannot be created.
- Authors may enter into separate, additional contractual agreements for the non-exclusive distribution of the journal's published version of the article (for example, including it in an institutional repository or publishing it in a book), provided that the work is clearly indicated as having first been published in this journal.
- Authors are permitted and encouraged to post their work online (e.g., on institutional or personal websites) before and during the review and publication process, as it can lead to productive exchanges and greater and faster dissemination of the published work.